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《Aeronautical Science & Technology》 2020-01
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Study on NBTI Effect of PDSOI MOSFET

Wang Chengcheng;Zhou Longda;Pu Shi;Wang Fang;Yang Hong;Zeng Chuanbin;Han Zhengsheng;Luo Jiajun;Bu Jianhui;Institute of Microelectronics of Chinese Academy of Sciences;Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences;University of Chinese Academy of Sciences;AVIC Xi'an Institute of Aeronautical Computing Technology;Key Laboratory of Microelectronic Devices and Integrated Technology,Chinese Academy of Sciences;  
The NBTI effect seriously affects the high temperature reliability of the device. In this paper, the NBTI effect of 1.2μm process Partially Depleted Silicon On Insulator(PDSOI) device was studied. Acceleration stressing experiments were made to obtain threshold voltage shift of PDSOI device effected by NBTI. The main influencing factors are stress time, temperature and gate bias voltage. Through the V_g model, the NBTI effect lifetime of PDSOI device is estimated which can be used to evaluate the high temperature reliability of 1.2μm process PDSOI device.
【Fund】: 航空科学基金(201743X2001)~~
【CateGory Index】: TN386
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